APA (7th ed.) Citation

Hsieh, Y., Lin, Y., Huang, Y., Chih, Y., Chang, J., Lin, C., & King, Y. (2024). High-density via RRAM cell with multi-level setting by current compliance circuits. Discover Nano, 19(1), 1. https://doi.org/10.1186/s11671-023-03881-x

Chicago Style (17th ed.) Citation

Hsieh, Yu-Cheng, Yu-Cheng Lin, Yao-Hung Huang, Yu-Der Chih, Jonathan Chang, Chrong-Jung Lin, and Ya-Chin King. "High-density via RRAM Cell with Multi-level Setting by Current Compliance Circuits." Discover Nano 19, no. 1 (2024): 1. https://doi.org/10.1186/s11671-023-03881-x.

MLA (9th ed.) Citation

Hsieh, Yu-Cheng, et al. "High-density via RRAM Cell with Multi-level Setting by Current Compliance Circuits." Discover Nano, vol. 19, no. 1, 2024, p. 1, https://doi.org/10.1186/s11671-023-03881-x.