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High-density via RRAM cell with multi-level setting by current compliance circuits.

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Title: High-density via RRAM cell with multi-level setting by current compliance circuits.
Authors: Hsieh, Yu-Cheng1, Lin, Yu-Cheng1, Huang, Yao-Hung1, Chih, Yu-Der2, Chang, Jonathan2, Lin, Chrong-Jung1, King, Ya-Chin1, ycking@ee.nthu.edu.tw
Source: Discover Nano; 3/25/2024, Vol. 19 Issue 1, p1-8, 8p
Database: Applied Science & Technology Source
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An: 176250638
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PubType: Academic Journal
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      – Type: doi
        Value: 10.1186/s11671-023-03881-x
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        Text: English
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              Text: 3/25/2024
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              Y: 2024
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