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Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density.

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Bibliographic Details
Title: Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density.
Authors: Tyagi, Subodh1,2, subodh.tyagi.sspl@gov.in, Goyal, Anshu1, Rana, Sovinder Singh1, Meena, Udai Ram1, Mishra, Puspashree1, Pandey, Rakesh Kumar1, Dalal, Sandeep1, Pandey, Akhilesh1, Garg, Arun Kumar1, Kumar, Shiv1,3, Singh, Rajendra2
Source: Journal of Materials Science: Materials in Electronics; May2024, Vol. 35 Issue 14, p1-10, 10p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-024-12724-z