APA (7th ed.) Citation

Tyagi, S., Goyal, A., Rana, S. S., Meena, U. R., Mishra, P., Pandey, R. K., . . . Singh, R. (2024). Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density. Journal of Materials Science: Materials in Electronics, 35(14), 1. https://doi.org/10.1007/s10854-024-12724-z

Chicago Style (17th ed.) Citation

Tyagi, Subodh, et al. "Annealing of MBE-grown CdTe Epitaxial Layer at Various Tellurium Overpressure for Reduced Defect Density." Journal of Materials Science: Materials in Electronics 35, no. 14 (2024): 1. https://doi.org/10.1007/s10854-024-12724-z.

MLA (9th ed.) Citation

Tyagi, Subodh, et al. "Annealing of MBE-grown CdTe Epitaxial Layer at Various Tellurium Overpressure for Reduced Defect Density." Journal of Materials Science: Materials in Electronics, vol. 35, no. 14, 2024, p. 1, https://doi.org/10.1007/s10854-024-12724-z.