Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.
Saved in:
| Title: | Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters. |
|---|---|
| Authors: | Jiang, Yang1,2, Du, FangZhou1, Wen, KangYao1, He, JiaQi1, Wang, PeiRan1, Li, MuJun1, Tang, ChuYing1, Zhang, Yi1,2, Wang, ZhongRui2, zrwang@eee.hku.hk, Wang, Qing1,3, wangq7@sustech.edu.cn, Yu, HongYu1,3, yuhy@sustech.edu.cn |
| Source: | Applied Physics Letters; 6/10/2024, Vol. 124 Issue 24, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/5.0208817 |
