APA (7th ed.) Citation

Jiang, Y., Du, F., Wen, K., He, J., Wang, P., Li, M., . . . Yu, H. (2024). Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters. Applied Physics Letters, 124(24), 1. https://doi.org/10.1063/5.0208817

Chicago Style (17th ed.) Citation

Jiang, Yang, et al. "Charge Trapping Layer Enabled High-performance E-mode GaN HEMTs and Monolithic Integration GaN Inverters." Applied Physics Letters 124, no. 24 (2024): 1. https://doi.org/10.1063/5.0208817.

MLA (9th ed.) Citation

Jiang, Yang, et al. "Charge Trapping Layer Enabled High-performance E-mode GaN HEMTs and Monolithic Integration GaN Inverters." Applied Physics Letters, vol. 124, no. 24, 2024, p. 1, https://doi.org/10.1063/5.0208817.