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Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.

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Title: Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.
Authors: Jiang, Yang1,2, Du, FangZhou1, Wen, KangYao1, He, JiaQi1, Wang, PeiRan1, Li, MuJun1, Tang, ChuYing1, Zhang, Yi1,2, Wang, ZhongRui2, zrwang@eee.hku.hk, Wang, Qing1,3, wangq7@sustech.edu.cn, Yu, HongYu1,3, yuhy@sustech.edu.cn
Source: Applied Physics Letters; 6/10/2024, Vol. 124 Issue 24, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 177896840
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Jiang%2C+Yang%22">Jiang, Yang</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Du%2C+FangZhou%22">Du, FangZhou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wen%2C+KangYao%22">Wen, KangYao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+JiaQi%22">He, JiaQi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+PeiRan%22">Wang, PeiRan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+MuJun%22">Li, MuJun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+ChuYing%22">Tang, ChuYing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Yi%22">Zhang, Yi</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+ZhongRui%22">Wang, ZhongRui</searchLink><relatesTo>2</relatesTo>, <i>zrwang@eee.hku.hk</i><br /><searchLink fieldCode="AU" term="%22Wang%2C+Qing%22">Wang, Qing</searchLink><relatesTo>1,3</relatesTo>, <i>wangq7@sustech.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Yu%2C+HongYu%22">Yu, HongYu</searchLink><relatesTo>1,3</relatesTo>, <i>yuhy@sustech.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 6/10/2024, Vol. 124 Issue 24, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=177896840
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0208817
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Jiang, Yang
      – PersonEntity:
          Name:
            NameFull: Du, FangZhou
      – PersonEntity:
          Name:
            NameFull: Wen, KangYao
      – PersonEntity:
          Name:
            NameFull: He, JiaQi
      – PersonEntity:
          Name:
            NameFull: Wang, PeiRan
      – PersonEntity:
          Name:
            NameFull: Li, MuJun
      – PersonEntity:
          Name:
            NameFull: Tang, ChuYing
      – PersonEntity:
          Name:
            NameFull: Zhang, Yi
      – PersonEntity:
          Name:
            NameFull: Wang, ZhongRui
      – PersonEntity:
          Name:
            NameFull: Wang, Qing
      – PersonEntity:
          Name:
            NameFull: Yu, HongYu
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 10
              M: 06
              Text: 6/10/2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 124
            – Type: issue
              Value: 24
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1