Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination.
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| Title: | Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. |
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| Authors: | Li, Jinxiong1, Ju, Shanshan1, Tang, Yupu1, Li, Jiye2, Li, Xiao2, Tian, Xu1, Zhu, Jianzhang1, Ge, Qingqin3, Lu, Lei2, Zhang, Shengdong2, Wang, Xinwei1,4, wangxw@pkusz.edu.cn |
| Source: | Advanced Functional Materials; 7/10/2024, Vol. 34 Issue 28, p1-11, 11p |
| Database: | Applied Science & Technology Source |
| ISSN: | 1616301X |
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| DOI: | 10.1002/adfm.202401170 |
