APA (7th ed.) Citation

Li, J., Ju, S., Tang, Y., Li, J., Li, X., Tian, X., . . . Wang, X. (2024). Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. Advanced Functional Materials, 34(28), 1. https://doi.org/10.1002/adfm.202401170

Chicago Style (17th ed.) Citation

Li, Jinxiong, et al. "Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination." Advanced Functional Materials 34, no. 28 (2024): 1. https://doi.org/10.1002/adfm.202401170.

MLA (9th ed.) Citation

Li, Jinxiong, et al. "Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination." Advanced Functional Materials, vol. 34, no. 28, 2024, p. 1, https://doi.org/10.1002/adfm.202401170.