Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination.
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| Title: | Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. |
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| Authors: | Li, Jinxiong1, Ju, Shanshan1, Tang, Yupu1, Li, Jiye2, Li, Xiao2, Tian, Xu1, Zhu, Jianzhang1, Ge, Qingqin3, Lu, Lei2, Zhang, Shengdong2, Wang, Xinwei1,4, wangxw@pkusz.edu.cn |
| Source: | Advanced Functional Materials; 7/10/2024, Vol. 34 Issue 28, p1-11, 11p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 178355097 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Li%2C+Jinxiong%22">Li, Jinxiong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ju%2C+Shanshan%22">Ju, Shanshan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Yupu%22">Tang, Yupu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Jiye%22">Li, Jiye</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Xiao%22">Li, Xiao</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Tian%2C+Xu%22">Tian, Xu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhu%2C+Jianzhang%22">Zhu, Jianzhang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ge%2C+Qingqin%22">Ge, Qingqin</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Lu%2C+Lei%22">Lu, Lei</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Shengdong%22">Zhang, Shengdong</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Xinwei%22">Wang, Xinwei</searchLink><relatesTo>1,4</relatesTo>, <i>wangxw@pkusz.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; 7/10/2024, Vol. 34 Issue 28, p1-11, 11p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=178355097 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/adfm.202401170 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 11 StartPage: 1 Titles: – TitleFull: Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Li, Jinxiong – PersonEntity: Name: NameFull: Ju, Shanshan – PersonEntity: Name: NameFull: Tang, Yupu – PersonEntity: Name: NameFull: Li, Jiye – PersonEntity: Name: NameFull: Li, Xiao – PersonEntity: Name: NameFull: Tian, Xu – PersonEntity: Name: NameFull: Zhu, Jianzhang – PersonEntity: Name: NameFull: Ge, Qingqin – PersonEntity: Name: NameFull: Lu, Lei – PersonEntity: Name: NameFull: Zhang, Shengdong – PersonEntity: Name: NameFull: Wang, Xinwei IsPartOfRelationships: – BibEntity: Dates: – D: 10 M: 07 Text: 7/10/2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 1616301X Numbering: – Type: volume Value: 34 – Type: issue Value: 28 Titles: – TitleFull: Advanced Functional Materials Type: main |
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