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Microstructure, dielectric storage, ferroelectric polarization, and non-ferroelectric resistive switching characteristics of sol–gel-derived BZT ferroelectric films with tailored Zr content.

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Bibliographic Details
Title:	Microstructure, dielectric storage, ferroelectric polarization, and non-ferroelectric resistive switching characteristics of sol–gel-derived BZT ferroelectric films with tailored Zr content.
Authors:	Zhang, Wei¹, chanway@njupt.edu.cn, Li, Jiang¹, Yao, Wenjian¹, Liu, Jun¹, Zhang, Xuehua¹, Hu, Fangren^1,2
Source:	Journal of Materials Science; Oct2024, Vol. 59 Issue 37, p17504-17516, 13p
Database:	Applied Science & Technology Source
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Description
ISSN:	00222461
DOI:	10.1007/s10853-024-10238-x