APA (7th ed.) Citation

Zhang, W., Li, J., Yao, W., Liu, J., Zhang, X., & Hu, F. (2024). Microstructure, dielectric storage, ferroelectric polarization, and non-ferroelectric resistive switching characteristics of sol–gel-derived BZT ferroelectric films with tailored Zr content. Journal of Materials Science, 59(37), 17504. https://doi.org/10.1007/s10853-024-10238-x

Chicago Style (17th ed.) Citation

Zhang, Wei, Jiang Li, Wenjian Yao, Jun Liu, Xuehua Zhang, and Fangren Hu. "Microstructure, Dielectric Storage, Ferroelectric Polarization, and Non-ferroelectric Resistive Switching Characteristics of Sol–gel-derived BZT Ferroelectric Films with Tailored Zr Content." Journal of Materials Science 59, no. 37 (2024): 17504. https://doi.org/10.1007/s10853-024-10238-x.

MLA (9th ed.) Citation

Zhang, Wei, et al. "Microstructure, Dielectric Storage, Ferroelectric Polarization, and Non-ferroelectric Resistive Switching Characteristics of Sol–gel-derived BZT Ferroelectric Films with Tailored Zr Content." Journal of Materials Science, vol. 59, no. 37, 2024, p. 17504, https://doi.org/10.1007/s10853-024-10238-x.