The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates.

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Title: The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates.
Authors: Kruszewski, Piotr1, konrad@unipress.waw.plkruszew@unipress.waw.pl, Sakowski, Konrad1,2, pprysta@unipress.waw.pl, Gościński, Krzysztof3, kgosc@ifpan.edu.pl, Prystawko, Paweł1
Source: Applied Sciences (2076-3417); Oct2024, Vol. 14 Issue 19, p8785, 11p
Database: Applied Science & Technology Source
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ISSN:20763417
DOI:10.3390/app14198785