APA (7th ed.) Citation

Kruszewski, P., Sakowski, K., Gościński, K., & Prystawko, P. (2024). The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates. Applied Sciences (2076-3417), 14(19), 8785. https://doi.org/10.3390/app14198785

Chicago Style (17th ed.) Citation

Kruszewski, Piotr, Konrad Sakowski, Krzysztof Gościński, and Paweł Prystawko. "The Photoionization Processes of Deep Trap Levels in N-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates." Applied Sciences (2076-3417) 14, no. 19 (2024): 8785. https://doi.org/10.3390/app14198785.

MLA (9th ed.) Citation

Kruszewski, Piotr, et al. "The Photoionization Processes of Deep Trap Levels in N-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates." Applied Sciences (2076-3417), vol. 14, no. 19, 2024, p. 8785, https://doi.org/10.3390/app14198785.