View in EDS HTML Full Text PDF Full Text

The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates.

Saved in:
Bibliographic Details
Title: The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates.
Authors: Kruszewski, Piotr1, konrad@unipress.waw.plkruszew@unipress.waw.pl, Sakowski, Konrad1,2, pprysta@unipress.waw.pl, Gościński, Krzysztof3, kgosc@ifpan.edu.pl, Prystawko, Paweł1
Source: Applied Sciences (2076-3417); Oct2024, Vol. 14 Issue 19, p8785, 11p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 180273402
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Kruszewski%2C+Piotr%22">Kruszewski, Piotr</searchLink><relatesTo>1</relatesTo>, <i>konrad@unipress.waw.plkruszew@unipress.waw.pl</i><br /><searchLink fieldCode="AU" term="%22Sakowski%2C+Konrad%22">Sakowski, Konrad</searchLink><relatesTo>1,2</relatesTo>, <i>pprysta@unipress.waw.pl</i><br /><searchLink fieldCode="AU" term="%22Gościński%2C+Krzysztof%22">Gościński, Krzysztof</searchLink><relatesTo>3</relatesTo>, <i>kgosc@ifpan.edu.pl</i><br /><searchLink fieldCode="AU" term="%22Prystawko%2C+Paweł%22">Prystawko, Paweł</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Sciences+%282076-3417%29%22">Applied Sciences (2076-3417)</searchLink>; Oct2024, Vol. 14 Issue 19, p8785, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=180273402
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/app14198785
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 8785
    Titles:
      – TitleFull: The Photoionization Processes of Deep Trap Levels in n-GaN Films Grown by MOVPE Technique on Ammono-GaN Substrates.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kruszewski, Piotr
      – PersonEntity:
          Name:
            NameFull: Sakowski, Konrad
      – PersonEntity:
          Name:
            NameFull: Gościński, Krzysztof
      – PersonEntity:
          Name:
            NameFull: Prystawko, Paweł
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 10
              Text: Oct2024
              Type: published
              Y: 2024
          Identifiers:
            – Type: issn-print
              Value: 20763417
          Numbering:
            – Type: volume
              Value: 14
            – Type: issue
              Value: 19
          Titles:
            – TitleFull: Applied Sciences (2076-3417)
              Type: main
ResultId 1