A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects.

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Bibliographic Details
Title: A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects.
Authors: Bardhan, Sudipta1, sudipta.bardhan15@gmail.com, Sahoo, Manodipan2, manodipan@iitism.ac.in, Samanta, Jagannath1, jagannath19060@gmail.com, Rahaman, Hafizur3, hafizur@vlsi.iiests.ac.in
Source: IETE Journal of Research; Sep2024, Vol. 70 Issue 9, p7451-7462, 12p
Database: Applied Science & Technology Source
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ISSN:03772063
DOI:10.1080/03772063.2024.2352154