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A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects.

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Title: A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects.
Authors: Bardhan, Sudipta1, sudipta.bardhan15@gmail.com, Sahoo, Manodipan2, manodipan@iitism.ac.in, Samanta, Jagannath1, jagannath19060@gmail.com, Rahaman, Hafizur3, hafizur@vlsi.iiests.ac.in
Source: IETE Journal of Research; Sep2024, Vol. 70 Issue 9, p7451-7462, 12p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 180554838
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  Data: A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=180554838
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1080/03772063.2024.2352154
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 7451
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      – TitleFull: A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects.
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            NameFull: Bardhan, Sudipta
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            NameFull: Sahoo, Manodipan
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            NameFull: Samanta, Jagannath
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              M: 09
              Text: Sep2024
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              Y: 2024
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              Value: 70
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