In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system.
Saved in:
| Title: | In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system. |
|---|---|
| Authors: | Gorsak, Cameron A.1, Bowman, Henry J.2, Gann, Katie R.1, Buontempo, Joshua T.1, Smith, Kathleen T.3, Tripathi, Pushpanshu1, Steele, Jacob1, Jena, Debdeep1,4,5, Schlom, Darrell G.1,5,6, Xing, Huili Grace1,4,5, Thompson, Michael O.1, Nair, Hari P.1, hn277@cornell.edu |
| Source: | Applied Physics Letters; 12/9/2024, Vol. 125 Issue 24, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/5.0239152 |
