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In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system.

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Title: In situ etching of β-Ga2O3 using tert-butyl chloride in an MOCVD system.
Authors: Gorsak, Cameron A.1, Bowman, Henry J.2, Gann, Katie R.1, Buontempo, Joshua T.1, Smith, Kathleen T.3, Tripathi, Pushpanshu1, Steele, Jacob1, Jena, Debdeep1,4,5, Schlom, Darrell G.1,5,6, Xing, Huili Grace1,4,5, Thompson, Michael O.1, Nair, Hari P.1, hn277@cornell.edu
Source: Applied Physics Letters; 12/9/2024, Vol. 125 Issue 24, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 181644793
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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        Value: 10.1063/5.0239152
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