Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications.
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| Title: | Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band applications. |
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| Authors: | Chang, Sung‐Jae1, sjchang@etri.re.kr, Jeong, Hyeon‐Seok2, Jung, Hyun‐Wook1, Choi, Su‐Min2, Choi, Il‐Gyu1, Noh, Youn‐Sub1, Kim, Seong‐Il1, Lee, Sang‐Heung1, Ahn, Ho‐Kyun1, Kang, Dong Min1, Kim, Dae‐Hyun2, Lim, Jong‐Won1 |
| Source: | ETRI Journal; Dec2024, Vol. 46 Issue 6, p1090-1102, 13p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 12256463 |
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| DOI: | 10.4218/etrij.2023-0250 |
