The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.

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Bibliographic Details
Title: The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.
Authors: Liu, Dawei1,2, Wang, Rui2,3, Jia, Chengyu2,3, Wang, Dingwei2,3, Zhao, Zhiguo2,4, Pan, Jiaqi2, panjq@zstu.edu.cn, Shi, Lei2,3
Source: Journal of Materials Science: Materials in Electronics; Dec2024, Vol. 35 Issue 36, p1-13, 13p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-024-14029-7