APA (7th ed.) Citation

Liu, D., Wang, R., Jia, C., Wang, D., Zhao, Z., Pan, J., & Shi, L. (2024). The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer. Journal of Materials Science: Materials in Electronics, 35(36), 1. https://doi.org/10.1007/s10854-024-14029-7

Chicago Style (17th ed.) Citation

Liu, Dawei, Rui Wang, Chengyu Jia, Dingwei Wang, Zhiguo Zhao, Jiaqi Pan, and Lei Shi. "The Transparent CuI/InGaZnO4 Pn Junction Toward Enhanced Photovoltaic Response via Potential Regulation of Ultrathin NiO Transition Layer." Journal of Materials Science: Materials in Electronics 35, no. 36 (2024): 1. https://doi.org/10.1007/s10854-024-14029-7.

MLA (9th ed.) Citation

Liu, Dawei, et al. "The Transparent CuI/InGaZnO4 Pn Junction Toward Enhanced Photovoltaic Response via Potential Regulation of Ultrathin NiO Transition Layer." Journal of Materials Science: Materials in Electronics, vol. 35, no. 36, 2024, p. 1, https://doi.org/10.1007/s10854-024-14029-7.