The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer.
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| Title: | The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer. |
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| Authors: | Liu, Dawei1,2, Wang, Rui2,3, Jia, Chengyu2,3, Wang, Dingwei2,3, Zhao, Zhiguo2,4, Pan, Jiaqi2, panjq@zstu.edu.cn, Shi, Lei2,3 |
| Source: | Journal of Materials Science: Materials in Electronics; Dec2024, Vol. 35 Issue 36, p1-13, 13p |
| Database: | Applied Science & Technology Source |
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| FullText | Links: – Type: pdflink Text: Availability: 1 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 181900040 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Liu%2C+Dawei%22">Liu, Dawei</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Rui%22">Wang, Rui</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22Jia%2C+Chengyu%22">Jia, Chengyu</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Dingwei%22">Wang, Dingwei</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhao%2C+Zhiguo%22">Zhao, Zhiguo</searchLink><relatesTo>2,4</relatesTo><br /><searchLink fieldCode="AU" term="%22Pan%2C+Jiaqi%22">Pan, Jiaqi</searchLink><relatesTo>2</relatesTo>, <i>panjq@zstu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Shi%2C+Lei%22">Shi, Lei</searchLink><relatesTo>2,3</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Dec2024, Vol. 35 Issue 36, p1-13, 13p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=181900040 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s10854-024-14029-7 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 13 StartPage: 1 Titles: – TitleFull: The transparent CuI/InGaZnO4 pn junction toward enhanced photovoltaic response via potential regulation of ultrathin NiO transition layer. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Liu, Dawei – PersonEntity: Name: NameFull: Wang, Rui – PersonEntity: Name: NameFull: Jia, Chengyu – PersonEntity: Name: NameFull: Wang, Dingwei – PersonEntity: Name: NameFull: Zhao, Zhiguo – PersonEntity: Name: NameFull: Pan, Jiaqi – PersonEntity: Name: NameFull: Shi, Lei IsPartOfRelationships: – BibEntity: Dates: – D: 21 M: 12 Text: Dec2024 Type: published Y: 2024 Identifiers: – Type: issn-print Value: 09574522 Numbering: – Type: volume Value: 35 – Type: issue Value: 36 Titles: – TitleFull: Journal of Materials Science: Materials in Electronics Type: main |
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