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Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al

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Bibliographic Details
Title:	Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al
Authors:	Yu, Tien-Han¹, Chen, Yu-Lin¹, Tsao, Yi-Fan², Hsu, Chin-Tsai³, Lu, Tsan-Feng⁴, Hsu, Heng-Tung¹, hthsu@nycu.edu.tw
Source:	Journal of Electronic Materials; Feb2025, Vol. 54 Issue 2, p1096-1103, 8p
Database:	Applied Science & Technology Source
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ISSN:	03615235
DOI:	10.1007/s11664-024-11600-0