Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation.
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| Title: | Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation. |
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| Authors: | Okhrimenko, O. B.1, olga@isp.kiev.ua, Bacherikov, Yu. Yu.1, yuyu@isp.kiev.ua, Kolomys, O. F.1, olkolomys@gmail.com, Maziar, D. M.1, fmbfiz13.mazyar@kpnu.edu.ua, Strelchuk, V. V.1, viktor.strelchuk@ccu-semicond.net, Lytvyn, V. K.1, lytvet@ukr.net, Konakova, R. V.1, konakova@isp.kiev.ua |
| Source: | Semiconductor Physics, Quantum Electronics & Optoelectronics; 2024, Vol. 27 Issue 3, p274-279, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 15608034 |
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| DOI: | 10.15407/spqeo27.03.274 |
