APA (7th ed.) Citation

Okhrimenko, O. B., Bacherikov, Y. Y., Kolomys, O. F., Maziar, D. M., Strelchuk, V. V., Lytvyn, V. K., & Konakova, R. V. (2024). Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation. Semiconductor Physics, Quantum Electronics & Optoelectronics, 27(3), 274. https://doi.org/10.15407/spqeo27.03.274

Chicago Style (17th ed.) Citation

Okhrimenko, O. B., Yu. Yu Bacherikov, O. F. Kolomys, D. M. Maziar, V. V. Strelchuk, V. K. Lytvyn, and R. V. Konakova. "Redistribution of Radiative Recombination Centers in the SiC/por-SiC/Dy2O3 Structure Under the Influence of Athermal Microwave Irradiation." Semiconductor Physics, Quantum Electronics & Optoelectronics 27, no. 3 (2024): 274. https://doi.org/10.15407/spqeo27.03.274.

MLA (9th ed.) Citation

Okhrimenko, O. B., et al. "Redistribution of Radiative Recombination Centers in the SiC/por-SiC/Dy2O3 Structure Under the Influence of Athermal Microwave Irradiation." Semiconductor Physics, Quantum Electronics & Optoelectronics, vol. 27, no. 3, 2024, p. 274, https://doi.org/10.15407/spqeo27.03.274.