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Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.

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Bibliographic Details
Title:	Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.
Authors:	Du, Fangzhou¹, Jiang, Yang^1,2, Wang, Peiran¹, Wen, Kangyao¹, Tang, Chuying¹, He, Jiaqi¹, Deng, Chenkai¹, Zhang, Yi^1,2, Li, Mujun¹, Wang, Xiaohui¹, Hu, Qiaoyu¹, Yu, Wenyue¹, Wang, Qing^1,3,4, wangq7@sustech.edu.cn, Yu, HongYu^1,3,4, yuhy@sustech.edu.cn
Source:	Applied Physics Letters; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p
Database:	Applied Science & Technology Source

Description
ISSN:	00036951
DOI:	10.1063/5.0232630