APA (7th ed.) Citation

Du, F., Jiang, Y., Wang, P., Wen, K., Tang, C., He, J., . . . Yu, H. (2025). Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment. Applied Physics Letters, 126(1), 1. https://doi.org/10.1063/5.0232630

Chicago Style (17th ed.) Citation

Du, Fangzhou, et al. "Improved Gate Leakage Current and Breakdown Voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based Charge-trapping Layer Dielectric and in Situ O3 Treatment." Applied Physics Letters 126, no. 1 (2025): 1. https://doi.org/10.1063/5.0232630.

MLA (9th ed.) Citation

Du, Fangzhou, et al. "Improved Gate Leakage Current and Breakdown Voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based Charge-trapping Layer Dielectric and in Situ O3 Treatment." Applied Physics Letters, vol. 126, no. 1, 2025, p. 1, https://doi.org/10.1063/5.0232630.