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Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.

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Title: Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.
Authors: Du, Fangzhou1, Jiang, Yang1,2, Wang, Peiran1, Wen, Kangyao1, Tang, Chuying1, He, Jiaqi1, Deng, Chenkai1, Zhang, Yi1,2, Li, Mujun1, Wang, Xiaohui1, Hu, Qiaoyu1, Yu, Wenyue1, Wang, Qing1,3,4, wangq7@sustech.edu.cn, Yu, HongYu1,3,4, yuhy@sustech.edu.cn
Source: Applied Physics Letters; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 182191898
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.
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  Data: <searchLink fieldCode="AU" term="%22Du%2C+Fangzhou%22">Du, Fangzhou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+Yang%22">Jiang, Yang</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Peiran%22">Wang, Peiran</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wen%2C+Kangyao%22">Wen, Kangyao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Chuying%22">Tang, Chuying</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+Jiaqi%22">He, Jiaqi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Deng%2C+Chenkai%22">Deng, Chenkai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Yi%22">Zhang, Yi</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Mujun%22">Li, Mujun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Xiaohui%22">Wang, Xiaohui</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Hu%2C+Qiaoyu%22">Hu, Qiaoyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yu%2C+Wenyue%22">Yu, Wenyue</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Qing%22">Wang, Qing</searchLink><relatesTo>1,3,4</relatesTo>, <i>wangq7@sustech.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Yu%2C+HongYu%22">Yu, HongYu</searchLink><relatesTo>1,3,4</relatesTo>, <i>yuhy@sustech.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=182191898
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      – Type: doi
        Value: 10.1063/5.0232630
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        Text: English
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        PageCount: 6
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      – TitleFull: Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.
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              Text: 1/6/2025
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              Y: 2025
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