Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.
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| Title: | Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment. |
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| Authors: | Du, Fangzhou1, Jiang, Yang1,2, Wang, Peiran1, Wen, Kangyao1, Tang, Chuying1, He, Jiaqi1, Deng, Chenkai1, Zhang, Yi1,2, Li, Mujun1, Wang, Xiaohui1, Hu, Qiaoyu1, Yu, Wenyue1, Wang, Qing1,3,4, wangq7@sustech.edu.cn, Yu, HongYu1,3,4, yuhy@sustech.edu.cn |
| Source: | Applied Physics Letters; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p |
| Database: | Applied Science & Technology Source |
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