The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes.
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| Title: | The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes. |
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| Authors: | Liu, Jinyang1, He, Song1, Xu, Guangwei1, xugw@ustc.edu.cn, Hao, Weibing1, Zhou, Xuanze1, Zheng, Zheyang1, Long, Shibing1 |
| Source: | Applied Physics Letters; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0244107 |
