Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity.
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| Title: | Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity. |
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| Authors: | Murugapandiyan, P.1, murugavlsi@gmail.com, Revathy, A.2, Ramkumar, N.3, Kumar, R. Saravana4, Mohanbabu, A.5 |
| Source: | Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p2340-2354, 15p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 03615235 |
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| DOI: | 10.1007/s11664-024-11664-y |
