APA (7th ed.) Citation

Murugapandiyan, P., Revathy, A., Ramkumar, N., Kumar, R. S., & Mohanbabu, A. (2025). Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity. Journal of Electronic Materials, 54(3), 2340. https://doi.org/10.1007/s11664-024-11664-y

Chicago Style (17th ed.) Citation

Murugapandiyan, P., A. Revathy, N. Ramkumar, R. Saravana Kumar, and A. Mohanbabu. "Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity." Journal of Electronic Materials 54, no. 3 (2025): 2340. https://doi.org/10.1007/s11664-024-11664-y.

MLA (9th ed.) Citation

Murugapandiyan, P., et al. "Comparative Study of AlGaN/InGaN/β-Ga2O3 and InAlN/InGaN/β-Ga2O3 HEMTs for Enhanced RF Linearity." Journal of Electronic Materials, vol. 54, no. 3, 2025, p. 2340, https://doi.org/10.1007/s11664-024-11664-y.