High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes.
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| Title: | High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes. |
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| Authors: | von Bardeleben, H. J.1, vonbarde@insp.jussieu.fr, Zhou, Xuanze2, zhouxz@ustc.edu.cn, Zhou, Jingbo2, Xu, Guangwei2, Long, Shibing2, Gerstmann, U.3,4 |
| Source: | Journal of Applied Physics; 2/7/2025, Vol. 137 Issue 5, p1-11, 11p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/5.0249111 |
