APA (7th ed.) Citation

von Bardeleben, H. J., Zhou, X., Zhou, J., Xu, G., Long, S., & Gerstmann, U. (2025). High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes. Journal of Applied Physics, 137(5), 1. https://doi.org/10.1063/5.0249111

Chicago Style (17th ed.) Citation

von Bardeleben, H. J., Xuanze Zhou, Jingbo Zhou, Guangwei Xu, Shibing Long, and U. Gerstmann. "High-temperature Annealing Induced Electrical Compensation in UID and Sn Doped β-Ga2O3 Bulk Samples: The Role of VGa–Sn Complexes." Journal of Applied Physics 137, no. 5 (2025): 1. https://doi.org/10.1063/5.0249111.

MLA (9th ed.) Citation

von Bardeleben, H. J., et al. "High-temperature Annealing Induced Electrical Compensation in UID and Sn Doped β-Ga2O3 Bulk Samples: The Role of VGa–Sn Complexes." Journal of Applied Physics, vol. 137, no. 5, 2025, p. 1, https://doi.org/10.1063/5.0249111.