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High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes.

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Title: High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes.
Authors: von Bardeleben, H. J.1, vonbarde@insp.jussieu.fr, Zhou, Xuanze2, zhouxz@ustc.edu.cn, Zhou, Jingbo2, Xu, Guangwei2, Long, Shibing2, Gerstmann, U.3,4
Source: Journal of Applied Physics; 2/7/2025, Vol. 137 Issue 5, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 182884503
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2/7/2025, Vol. 137 Issue 5, p1-11, 11p
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        Value: 10.1063/5.0249111
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      – Code: eng
        Text: English
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        PageCount: 11
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      – TitleFull: High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes.
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            NameFull: Zhou, Xuanze
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            NameFull: Zhou, Jingbo
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            NameFull: Long, Shibing
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              Text: 2/7/2025
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              Y: 2025
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