APA (7th ed.) Citation

Lamprecht, R., Vialetto, L., Gergs, T., Zahari, F., Marquardt, R., Kohlstedt, H., & Trieschmann, J. (2025). Thickness‐Related Analog Switching in SiOx/Cu/SiOx Memristive Devices for Neuromorphic Applications. Advanced Engineering Materials, 27(2), 1. https://doi.org/10.1002/adem.202401824

Chicago Style (17th ed.) Citation

Lamprecht, Rouven, Luca Vialetto, Tobias Gergs, Finn Zahari, Richard Marquardt, Hermann Kohlstedt, and Jan Trieschmann. "Thickness‐Related Analog Switching in SiOx/Cu/SiOx Memristive Devices for Neuromorphic Applications." Advanced Engineering Materials 27, no. 2 (2025): 1. https://doi.org/10.1002/adem.202401824.

MLA (9th ed.) Citation

Lamprecht, Rouven, et al. "Thickness‐Related Analog Switching in SiOx/Cu/SiOx Memristive Devices for Neuromorphic Applications." Advanced Engineering Materials, vol. 27, no. 2, 2025, p. 1, https://doi.org/10.1002/adem.202401824.