Bibliographic Details
| Title: |
Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy. |
| Authors: |
Hensling, Felix V.E.1, hensling@cornell.edu, Vogt, Patrick1,2, Park, Jisung1, Shang, Shun‐Li3, Ye, Huacheng4, Wu, Yu‐Mi5, Smith, Kathleen6, Show, Veronica7, Azizie, Kathy1, Paik, Hanjong1,7,8, Jena, Debdeep1,6, Xing, Huili G.1,6, Suyolcu, Y. Eren1,5, van Aken, Peter A.5, Datta, Suman4, Liu, Zi‐Kui3, Schlom, Darrell G.1,9,10 |
| Source: |
Advanced Electronic Materials; Mar2025, Vol. 11 Issue 3, p1-14, 14p |
| Database: |
Applied Science & Technology Source |
