APA (7th ed.) Citation

Hensling, F. V., Vogt, P., Park, J., Shang, S., Ye, H., Wu, Y., . . . Schlom, D. G. (2025). Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy. Advanced Electronic Materials, 11(3), 1. https://doi.org/10.1002/aelm.202400499

Chicago Style (17th ed.) Citation

Hensling, Felix V.E., et al. "Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy." Advanced Electronic Materials 11, no. 3 (2025): 1. https://doi.org/10.1002/aelm.202400499.

MLA (9th ed.) Citation

Hensling, Felix V.E., et al. "Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy." Advanced Electronic Materials, vol. 11, no. 3, 2025, p. 1, https://doi.org/10.1002/aelm.202400499.