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Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy.

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Title: Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy.
Authors: Hensling, Felix V.E.1, hensling@cornell.edu, Vogt, Patrick1,2, Park, Jisung1, Shang, Shun‐Li3, Ye, Huacheng4, Wu, Yu‐Mi5, Smith, Kathleen6, Show, Veronica7, Azizie, Kathy1, Paik, Hanjong1,7,8, Jena, Debdeep1,6, Xing, Huili G.1,6, Suyolcu, Y. Eren1,5, van Aken, Peter A.5, Datta, Suman4, Liu, Zi‐Kui3, Schlom, Darrell G.1,9,10
Source: Advanced Electronic Materials; Mar2025, Vol. 11 Issue 3, p1-14, 14p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 183926178
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; Mar2025, Vol. 11 Issue 3, p1-14, 14p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=183926178
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              Text: Mar2025
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