Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches.

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Bibliographic Details
Title: Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches.
Authors: Chen, Zhipeng1, Huang, Zhuocheng1, Sun, Qian1, Xu, Kun1, Lin, Zhouyang1, Zheng, Zhong1, Wu, Zhaoyang2, Zhang, Wei3, Guo, Hui1, Liu, Yapeng4, Zhang, Yuming1, Peng, Bo1, Wang, Yutian1, ytwang@xidian.edu.cn
Source: Journal of Applied Physics; 5/7/2025, Vol. 137 Issue 17, p1-9, 9p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/5.0271142