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Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches.

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Title: Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches.
Authors: Chen, Zhipeng1, Huang, Zhuocheng1, Sun, Qian1, Xu, Kun1, Lin, Zhouyang1, Zheng, Zhong1, Wu, Zhaoyang2, Zhang, Wei3, Guo, Hui1, Liu, Yapeng4, Zhang, Yuming1, Peng, Bo1, Wang, Yutian1, ytwang@xidian.edu.cn
Source: Journal of Applied Physics; 5/7/2025, Vol. 137 Issue 17, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 185032856
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 5/7/2025, Vol. 137 Issue 17, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=185032856
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/5.0271142
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Analysis of the influence of defect evolution on the performance and damage of 4H-SiC photoconductive semiconductor switches.
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            NameFull: Chen, Zhipeng
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            NameFull: Huang, Zhuocheng
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          Dates:
            – D: 07
              M: 05
              Text: 5/7/2025
              Type: published
              Y: 2025
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              Value: 00218979
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              Value: 137
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