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Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers.

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Bibliographic Details
Title: Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers.
Authors: Chen, Yi-Fei1, Cai, Li-E1, 2011111001@xmut.edu.cn, Niu, Kai1, Ma, Zhi-Yu1, Chen, Zhi-Chao1, Liu, Xiang-Yu1, Sun, Chuan-Tao1, Sun, Dong1, Lin, Hai-Feng1, Xiong, Fei-Bing1
Source: Journal of Electronic Materials; Aug2025, Vol. 54 Issue 8, p6847-6857, 11p
Database: Applied Science & Technology Source
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Description
ISSN:03615235
DOI:10.1007/s11664-025-12010-6