Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al2O3/GaN characterized by sputter-assisted ToF-SIMS.
Saved in:
| Title: | Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al2O3/GaN characterized by sputter-assisted ToF-SIMS. |
|---|---|
| Authors: | Rummel, B. D.1, bdrumme@sandia.gov, Klesko, J. P.1, Meyerson, M. L.1, Ohlhausen, J. A.1, Glaser, C. E.1, Binder, A. T.1, Dickens, P. T.1, Kaplar, R. J.1 |
| Source: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2025, Vol. 43 Issue 4, p1-7, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07342101 |
|---|---|
| DOI: | 10.1116/6.0004311 |