Rummel, B. D., Klesko, J. P., Meyerson, M. L., Ohlhausen, J. A., Glaser, C. E., Binder, A. T., . . . Kaplar, R. J. (2025). Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al2O3/GaN characterized by sputter-assisted ToF-SIMS. Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 43(4), 1. https://doi.org/10.1116/6.0004311
Chicago Style (17th ed.) CitationRummel, B. D., J. P. Klesko, M. L. Meyerson, J. A. Ohlhausen, C. E. Glaser, A. T. Binder, P. T. Dickens, and R. J. Kaplar. "Interfacial Oxide and Other Species in Trimethylaluminum-pretreated Atomic Layer Deposition-Al2O3/GaN Characterized by Sputter-assisted ToF-SIMS." Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films 43, no. 4 (2025): 1. https://doi.org/10.1116/6.0004311.
MLA (9th ed.) CitationRummel, B. D., et al. "Interfacial Oxide and Other Species in Trimethylaluminum-pretreated Atomic Layer Deposition-Al2O3/GaN Characterized by Sputter-assisted ToF-SIMS." Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, vol. 43, no. 4, 2025, p. 1, https://doi.org/10.1116/6.0004311.