Bibliographic Details
| Title: |
Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing. |
| Authors: |
Xiao, Ming1,2, xiaom37@mail.sysu.edu.cn, Hellenbrand, Markus1, mkhh2@cam.ac.uk, Strkalj, Nives1,3, Bakhit, Babak1,4,5, Sun, Zhuotong1, Barmpatsalos, Nikolaos6, Joksas, Dovydas6, Dou, Hongyi7, Hu, Zedong7, Lu, Ping8, Karki, Samip9, Kunwar, Sundar9, Major, Jonathan D.10, Chen, Aiping9, Wang, Haiyan7, Jia, Quanxi11, Mehonic, Adnan6, MacManus‐Driscoll, Judith L.1, jld35@cam.ac.uk |
| Source: |
Advanced Functional Materials; 7/17/2025, Vol. 35 Issue 29, p1-15, 15p |
| Database: |
Applied Science & Technology Source |
