APA (7th ed.) Citation

Xiao, M., Hellenbrand, M., Strkalj, N., Bakhit, B., Sun, Z., Barmpatsalos, N., . . . MacManus‐Driscoll, J. L. (2025). Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing. Advanced Functional Materials, 35(29), 1. https://doi.org/10.1002/adfm.202418980

Chicago Style (17th ed.) Citation

Xiao, Ming, et al. "Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing." Advanced Functional Materials 35, no. 29 (2025): 1. https://doi.org/10.1002/adfm.202418980.

MLA (9th ed.) Citation

Xiao, Ming, et al. "Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing." Advanced Functional Materials, vol. 35, no. 29, 2025, p. 1, https://doi.org/10.1002/adfm.202418980.