P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors.

Saved in:

Bibliographic Details
Title:	P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors.
Authors:	Zhou, Xiaoliang¹, Lin, Qingping², Sun, Hejing¹, Sun, Haozhou¹, Chen, Yanling¹, Tan, Zhiwei¹
Source:	SID Symposium Digest of Technical Papers; Jun2025 Supplement 1, Vol. 56, p757-760, 4p
Database:	Applied Science & Technology Source

Description
ISSN:	0097966X
DOI:	10.1002/sdtp.18923