APA (7th ed.) Citation

Zhou, X., Lin, Q., Sun, H., Sun, H., Chen, Y., & Tan, Z. (2025). P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors. SID Symposium Digest of Technical Papers, 56, 757. https://doi.org/10.1002/sdtp.18923

Chicago Style (17th ed.) Citation

Zhou, Xiaoliang, Qingping Lin, Hejing Sun, Haozhou Sun, Yanling Chen, and Zhiwei Tan. "P‐1.18: Analysis of Hump Characteristic Under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors." SID Symposium Digest of Technical Papers 56 (2025): 757. https://doi.org/10.1002/sdtp.18923.

MLA (9th ed.) Citation

Zhou, Xiaoliang, et al. "P‐1.18: Analysis of Hump Characteristic Under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors." SID Symposium Digest of Technical Papers, vol. 56, 2025, p. 757, https://doi.org/10.1002/sdtp.18923.