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P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors.

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Title: P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors.
Authors: Zhou, Xiaoliang1, Lin, Qingping2, Sun, Hejing1, Sun, Haozhou1, Chen, Yanling1, Tan, Zhiwei1
Source: SID Symposium Digest of Technical Papers; Jun2025 Supplement 1, Vol. 56, p757-760, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 186835912
AccessLevel: 2
PubType: Academic Journal
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  Data: P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors.
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  Data: <searchLink fieldCode="AU" term="%22Zhou%2C+Xiaoliang%22">Zhou, Xiaoliang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lin%2C+Qingping%22">Lin, Qingping</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Sun%2C+Hejing%22">Sun, Hejing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sun%2C+Haozhou%22">Sun, Haozhou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Yanling%22">Chen, Yanling</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tan%2C+Zhiwei%22">Tan, Zhiwei</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22SID+Symposium+Digest+of+Technical+Papers%22">SID Symposium Digest of Technical Papers</searchLink>; Jun2025 Supplement 1, Vol. 56, p757-760, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=186835912
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      – Type: doi
        Value: 10.1002/sdtp.18923
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      – Code: eng
        Text: English
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      – TitleFull: P‐1.18: Analysis of Hump Characteristic under Positive Bias Temperature Stress in Amorphous InGaZnO Thin‐Film Transistors.
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            NameFull: Lin, Qingping
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              Text: Jun2025 Supplement 1
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              Y: 2025
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